• High Power and Gain: It has a high power output of 750W and a market-leading gain of 17dB, which can provide strong power support in applications and ensure efficient signal amplification.
• High Efficiency: The device is designed to achieve an efficiency of over 62%, which is believed to be the highest in its class. This high efficiency helps to significantly reduce power consumption, enabling more efficient use of energy and reducing operating costs.
• Good Load Mismatch Tolerance: It can withstand a load mismatch of VSWR = 10:1 without the need for an external protection circuit. This makes it highly adaptable in harsh RF environments and capable of dealing with various challenges in accelerator applications, such as load mismatch, temperature changes and voltage fluctuations.
• High Reliability: The Gen9HV 50V LDMOS process used to manufacture this transistor was introduced in 2017, which can produce highly consistent transistors, ensuring a high degree of reproducibility in the production process and thus improving the reliability and stability of the product.
• Wide Application Range: It is specially designed for particle accelerator applications in the 1.3GHz spectrum. It can also be used in 1.3GHz multi-carrier applications and RF power amplifiers.
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