The SD2933 is a gold – metallized N – channel MOS field – effect RF power transistor, designed for 50 V DC large – signal applications up to 150 MHz. It has the following functions and features:
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Excellent Thermal Stability
It features gold metalization, which provides excellent thermal stability, ensuring reliable operation under various thermal conditions. -
Common Source Configuration
It adopts a common – source configuration, which is beneficial for achieving specific electrical characteristics and signal amplification requirements in circuits. -
High Power Output
With a minimum output power of 300 W and a gain of 20 dB at 30 MHz, it can handle high – power signal amplification tasks, making it suitable for applications that require high – power RF output, such as ISM (Industrial, Scientific, and Medical) applications where reliability and ruggedness are crucial. -
Thermally Enhanced Packaging
The thermally enhanced packaging helps to lower the junction temperature, improving the heat dissipation efficiency and enhancing the overall performance and reliability of the transistor.
The SD2933 has a maximum operating temperature of +150 °C, a drain – source breakdown voltage of 125 V, a continuous drain current of 40 A, a gate – source breakdown voltage of ±20 V, and a forward transconductance gfs (max/min) of 10 S. These parameters further define its operating range and performance characteristics, enabling it to meet the requirements of different high – frequency circuit designs.
