BLF6G27-10G is a RF power field effect transistor of NXP. Its functional features are as follows:
• Operating Frequency and Signal Amplification: It operates in the S band from 2500MHz to 2700MHz and can perform power amplification on RF signals within this frequency band. It can be used in RF power amplifiers in base stations and multi-carrier applications to ensure effective signal transmission and coverage.
• Efficient and Stable Output: With a supply voltage of 28V, the average output power reaches 2W, the gain is 19dB, and the efficiency is 20%. In the typical single-carrier N-CDMA mode, it can output stable power with high efficiency to ensure signal quality.
• Low Signal Distortion: It has excellent adjacent channel power ratio performance, -49dBc at 885kHz offset and -64dBc at 1980kHz offset. It can effectively reduce signal distortion and make signal transmission more accurate.
• Integrated Protection Function: It is integrated with ESD protection, which enhances the anti-static ability, reduces the risk of device damage caused by static electricity, and improves the reliability and stability of the product.
• Internal Matching Design: The internal matching design simplifies the external circuit design, reduces the complexity and cost of the matching network, and facilitates engineers to design and apply circuits.
• Good Durability and Thermal Stability: It has excellent durability and can work stably in harsh environments. Moreover, it has excellent thermal stability, can withstand high temperature environments to a certain extent, and ensure stable performance.
• Operating Frequency and Signal Amplification: It operates in the S band from 2500MHz to 2700MHz and can perform power amplification on RF signals within this frequency band. It can be used in RF power amplifiers in base stations and multi-carrier applications to ensure effective signal transmission and coverage.
• Efficient and Stable Output: With a supply voltage of 28V, the average output power reaches 2W, the gain is 19dB, and the efficiency is 20%. In the typical single-carrier N-CDMA mode, it can output stable power with high efficiency to ensure signal quality.
• Low Signal Distortion: It has excellent adjacent channel power ratio performance, -49dBc at 885kHz offset and -64dBc at 1980kHz offset. It can effectively reduce signal distortion and make signal transmission more accurate.
• Integrated Protection Function: It is integrated with ESD protection, which enhances the anti-static ability, reduces the risk of device damage caused by static electricity, and improves the reliability and stability of the product.
• Internal Matching Design: The internal matching design simplifies the external circuit design, reduces the complexity and cost of the matching network, and facilitates engineers to design and apply circuits.
• Good Durability and Thermal Stability: It has excellent durability and can work stably in harsh environments. Moreover, it has excellent thermal stability, can withstand high temperature environments to a certain extent, and ensure stable performance.
