MJB44H11G is an NPN power transistor produced by ON Semiconductor. Its function description is as follows:
Basic Electrical Characteristics
• High Voltage Resistance: The maximum collector-emitter breakdown voltage is 80V, enabling it to withstand high voltages in the circuit and suitable for applications requiring high-voltage processing.
• Large Current Capacity: The maximum collector current (Ic) is 10A, capable of handling large currents and suitable for high-power applications.
• Low Saturation Voltage: The maximum Vce saturation voltage is 1V at 400mA, 8A, which can reduce power consumption and improve the efficiency of the circuit when the transistor is turned on.
• High Power Dissipation: The maximum power dissipation is 50W, allowing it to work stably in high-power environments.
• High Frequency Response: The transition frequency is 50MHz, which can respond to high-frequency signals to a certain extent and has a certain amplification effect on high-frequency signals.
Package and Installation Characteristics
• Surface Mount Package: It adopts the D2PAK package (TO-263-3), which is suitable for surface mount technology, facilitating automated production and reducing the occupied area of the circuit board.
Application Functions
• Power Amplification: It can amplify weak signals into strong signals needed by the circuit, such as in audio power amplifiers to amplify audio signals.
• Switching Function: It can be used as a switch in switching power supplies, DC-DC converters and other circuits to control the on and off of the circuit and realize the conversion and control of power.
• Motor Drive: In the motor control circuit, it can be used as a drive element to control the start, stop and speed regulation of the motor.
Basic Electrical Characteristics
• High Voltage Resistance: The maximum collector-emitter breakdown voltage is 80V, enabling it to withstand high voltages in the circuit and suitable for applications requiring high-voltage processing.
• Large Current Capacity: The maximum collector current (Ic) is 10A, capable of handling large currents and suitable for high-power applications.
• Low Saturation Voltage: The maximum Vce saturation voltage is 1V at 400mA, 8A, which can reduce power consumption and improve the efficiency of the circuit when the transistor is turned on.
• High Power Dissipation: The maximum power dissipation is 50W, allowing it to work stably in high-power environments.
• High Frequency Response: The transition frequency is 50MHz, which can respond to high-frequency signals to a certain extent and has a certain amplification effect on high-frequency signals.
Package and Installation Characteristics
• Surface Mount Package: It adopts the D2PAK package (TO-263-3), which is suitable for surface mount technology, facilitating automated production and reducing the occupied area of the circuit board.
Application Functions
• Power Amplification: It can amplify weak signals into strong signals needed by the circuit, such as in audio power amplifiers to amplify audio signals.
• Switching Function: It can be used as a switch in switching power supplies, DC-DC converters and other circuits to control the on and off of the circuit and realize the conversion and control of power.
• Motor Drive: In the motor control circuit, it can be used as a drive element to control the start, stop and speed regulation of the motor.
